10 pcs. IRFB3207 MOSFET TO-220 Power Transistor 75V 3.6mohm 180A (Not Ferramid)

Description

IRFB3207 (
IRFB3207
HR variant)
This listing is for 10 transistors.
Manufactured by International Rectifier before they were annexed into Infineon. Not some generic knockoff with a square millimeter of silicon.
Sourced from an authorized distributor (Arrow Electronics) and s
tored in the original tubes. The parts being sold will not have been handled except to transfer them into the tube used for shipping.
NOTE: The images of the de-encapsulated transistors are to show the internals only. The transistors sold will not have had that modification (though I assure that the result will be the same if it is taken on the part of the buyer).
These are veritably genuine parts and thus will perform likewise.
Contact me about the suitability of this part for your needs and with any questions you may have about it, or electronic design. I would like to help. Plus, pricing can be flexible.
If you need something small and cheap, like a bit of mediocre thermal paste, I might be able to include some. Ask about it.
Date code: 1307 (7th work week of 2013).
Contains lead (Pb).
Shipping
For increments of 50 pieces, these can be shipped in the stock tubes (which each contain 50 parts).
For an arbitrary amount, the tubes are cut and the ends are plugged with antistatic foam, then taped.
Ships from Texas. Cut sections of tube in a padded envelope unless otherwise arranged.
Some notes on the part:
The “theoretical” drain current is 170A, however, the package is “conservatively” (in the words of IR) limited to 75A. This number still assumes a moderate amount of power dissipation for the leads; the limit may be lower with air-wired leads, for example. Since this current isn’t power limited, the transistor can pass this 75A up to a case temperature of about 140°C (with a junction temperature of 175°C. Reducing these temperatures will decrease the failure rate of the MOSFETs). This is high enough to allow for realistic heatsinking, so the MOSFET may be practically used at 75A (often the current rating of MOSFETs can not be applied in this way).
The fairly low on-resistance allows it to pass reasonable currents—well in excess of 10A—with no heat sinking besides what is inherent to the TO-220 package. This current is for conduction losses only. Under repetitive switching, it may not apply.
The IRFB3207 is a trench MOSFET. As such, it is poorly suited for linear mode operation (e.g. constant current load, pass elements, or linear amplifiers). Refer to the graph for safe operating area (Figure 8) in the datasheet for derating requirements. International Rectifier, at least, seems to properly characterize this.
Because of the lame linear mode performance, switching speed should not be excessively slow. This is not too limiting, though, as even with 1mA gate current, the switching time will be low enough to avoid thermal runaway in typical applications. Switching losses in general rise with decreased gate current, and for switching applications, higher gate currents are advisabe (~100mA or more).
NOT FOR LOGIC-LEVEL GATE DRIVE.
To be fair, it’ll operate (well below its specifications) with 5V gate-source or more, but there are better parts for logic level applications. 6V gate-source or greater is recommended because that brings the part above the zero-temperature-coefficient point, and largely precludes the possibility of thermal runaway from hotspots.
Conduction performance increases are limited above a gate-source voltage of 8V, but increasing the drive voltage can increase the switching transition speeds.
Example applications:
Spot welding
Active rectification (e.g. reverse polarity protection)
General purpose switching
Power converters with switching frequencies up to a few hundred kHz;
"optimized" for switching under 100kHz
From the datasheet of the part,
https://www.infineon.com/dgdl/irfs3207pbf.pdf?fileId=5546d462533600a401535636708e215e
Rated for 75V drain-source, 170A drain current; package limited to 75A.
Maximum gate-source voltage of ±20V.
Temperature range of -55°C to 175°C.
Power dissipation of 300W with an unrealistic case temperature of 25°C.
Typical gate charge of 180 nC with 10V gate-source and 75A drain current.
Typical on-state resistance of 3.6 milliohms with 10V gate-source, 75A drain current, and a junction temperature of 25°C.
Gate threshold voltage between 2V and 4V (with a junction temperature of 25°C) and a gate plateau voltage around 6.7V with 75A of drain current.
The package drawing in the datasheet does not fully reflect the tab construction of these parts. See the photos for the actual tab. This is mainly a cosmetic difference and shouldn't really effect the thermal, electrical, and mechanical properties. The major dimensions are identical.
See the full datasheet for additional details. If there are characteristics not specified in the datasheet, ask me about them. I may be able to test a few parts. Also, I can provide help navigating the datasheet.
Before purchasing this, I would advise messaging me to confirm that the part is appropriate for your application. A large part of the reason for my foray into eBay selling is the hope that I might find fellow MOSFET users and enthusiasts. Surely another is profit, but there is more of that elsewhere and I moreover wish to enthuse over FETs and collaborate in some limited sense on projects.