10pcs FQP50N06 Transistor Power MOSFET N Channel 60V 50A 50N06 Fairchild NEW USA

Description

Features
:
50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
Low gate charge ( typical 31 nC)
Low Crss ( typical 65 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
Detailed specifications
Family: FQP50N06
Category: Power MOSFET
Configuration: Single
Maximum Power Dissipation: 120000mW
Number of Elements per Chip: 1
Channel Mode: Enhancement
Channel Type: N
Maximum Continuous Drain Current: 50A
Maximum Drain Source Resistance: 0.022Ohm@10V
Maximum Drain Source Voltage: 60V
Maximum Gate Source Voltage: ±25V
Typical Fall Time: 65ns
Typical Gate Charge @ Vgs: 31nC@10V
Typical Input Capacitance @ Vds: 1180pF@25V
Typical Rise Time: 105ns
Typical Turn-Off Delay Time: 60ns
Typical Turn-On Delay Time: 15ns
Minimum Operating Temperature: -55°C
Maximum Operating Temperature: 175°C
Mounting: Through Hole
Packaging: Rail
Pin_Count: 3
Supplier Package: TO-220
Product Width: 4.5mm
Product Height: 9.2mm
Product Length: 9.9mm
Product Type: MOSFET
Package Included:
10 x FQP50N06 Transistor MOSFET N Channel