MJ8501

Description

MJ8501 2.5 Amp NPN Silicon Power Transistors
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 125
Maximum collector-base voltage |Ucb|, V: 1400
Maximum collector-emitter voltage |Uce|, V: 800
Maximum emitter-base voltage |Ueb|, V: 8
Maximum collector current |Ic max|, A: 2.5
Maximum junction temperature (Tj), °C: 200
Collector capacitance (Cc), pF: 250
Forward current transfer ratio (hFE), min: 7.5
Package of MJ8501 transistor: TO3
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