NE651R479A Transistor N-CHANNEL GaAs HJ-FET / Lot of 25

Description

*** Acquired from a surplus lot of  manufacture overstock ***
Listing is for a lot quantity of 25 pieces
The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifier.
FEATURES
• GaAs HJ-FET structure
• High output power : Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm
Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm
Pout = +29.5 dBm TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm
• High linear gain : GL = 14.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = 0 dBm
GL = 12.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = 0 dBm
GL = 12.0 dB TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = 0 dBm
• High power added efficiency : 60 % TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm
60 % TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm
58 % TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm