Transistor silicon military KT321A (2T321A) USSR Lot of 20 pcs

Description

Transistor silicon military KT321A (2T321A)
USSR
Lot of 20 pcs
New, never used  / NOS / New Old Stock
KT321A
(
2T321A
)
Transistors
KT321A
(
2T321A
)
silicon, epitaxial-planar structures p-n-p pulse.
KT321A
(
2T321A
)
:
• Structure of the transistor: p-n-p
• Рк max - Permanent Dissipated Collector Power: 210 mW;
• Рк and max - Maximum allowable pulse dissipated collector power: 20 W;
• fgr - Boundary frequency of the transistor current transfer coefficient for a common emitter circuit: at least 60 MHz;
• UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 60 V;
• Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 4 V;
• Iк max - Maximum permissible constant collector current: 200 mA;
• Iкбо - Return current of the collector - current through the collector junction at the given collector-base return voltage and the open emitter terminal: no more than 0.1 mA;
• h21E - Static current transfer coefficient for a common emitter circuit in the large signal mode: 20 ... 60;
• Sk - Collector junction capacity: not more than 80 pF;
• Rke us - Resistance of saturation between the collector and the emitter: no more than 3.6 Ohm
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